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| Ordering number : EN8559 2SC6016 2SC6016 Applications * NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications Relay drivers, lamp drivers, motor drivers, flash. Features * * * * * * Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE range. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (250mm2!0.8mm) Tc=25C Conditions Ratings 40 30 6 8 11 1.2 1.3 3.5 150 --55 to +150 Unit V V V A A A W W C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE Conditions VCB=30V, IE=0A VEB=4V, IC=0A VCE=2V, IC=500mA Ratings min typ max 0.1 0.1 250 400 Unit A A Marking : QD Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2005EA MS IM TB-00001982 No.8559-1/4 2SC6016 Continued from preceding page. Parameter Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCE=10V, IC=500mA VCB=10V, f=1MHz IC=2.5A, IB=50mA IC=4A, IB=200mA IC=2.5A, IB=50mA IC=10A, IE=0A IC=1mA, RBE= IE=10A, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 40 30 6 30 320 15 Ratings min typ 320 40 110 145 0.85 165 220 1.2 max Unit MHz pF mV mV V V V V ns ns ns Package Dimensions unit : mm 7008-003 Top View 4.5 1.6 1.5 Switching Time Test Circuit IB1 IB2 VR RB OUTPUT PW=20s D.C.1% INPUT 50 RL + + 470F VCC=12V 2.5 1.0 4.0 100F VBE= --5V 1 0.4 0.5 1.5 2 3 0.4 IC=20IB1= --20IB2=2.5A 3.0 1 : Base 2 : Collector 3 : Emitter Bottom View SANYO : PCP 8 7 IC -- VCE 0m 80 mA 8 IC -- VBE VCE=2V Collector Current, IC -- A 6 5 4 Collector Current, IC -- A A 60m 50mA 40mA 30mA A 10 7 6 5 4 3 2 1 20mA 10mA 3 2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 5mA IB=0mA 0.8 0.9 1.0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Collector-to-Emitter Voltage, VCE -- V IT09768 Base-to-Emitter Voltage, VBE -- V Ta=75 C 25C --25C IT09769 No.8559-2/4 2SC6016 7 hFE -- IC VCE=2V Ta=75C 25C 7 f T -- IC VCE=10V 5 Gain-Bandwidth Product, f T -- MHz 5 7 1.0 2 3 5 7 10 IT09770 5 3 2 DC Current Gain, hFE 3 --25C 2 100 7 5 100 3 2 0.01 7 0.01 2 3 5 7 0.1 2 3 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 Collector Current, IC -- A 3 2 Cob -- VCB Collector Current, IC -- A 5 IT09771 VCE(sat) -- IC f=1MHz Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 0.1 7 5 3 2 0.01 7 5 10 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 IC / IB=20 Output Capacitance, Cob -- pF 100 7 5 = Ta C 75 3 2 5 --2 C 25 C 3 Collector-to-Base Voltage, VCB -- V 5 3 2 IT09772 3 VCE(sat) -- IC Collector Current, IC -- A 5 7 10 IT09773 VBE(sat) -- IC IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 IC / IB=50 0.1 7 5 3 2 1.0 Ta= --25C 7 5 = Ta C 75 -C 25 2 3 5 7 0.1 2 3 C 25 25C 75C 3 2 0.01 0.01 0.01 5 7 1.0 2 3 Collector Current, IC -- A 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 5 7 10 IT09774 2 3 5 7 0.1 2 3 5 7 1.0 2 3 ASO Collector Current, IC -- A 2.0 5 7 10 IT09775 PC -- Ta ICP=11A IC=8A 10 10 10s ms Collector Dissipation, PC -- W 1m s 100 s 0 50 Collector Current, IC -- A s 0m DC s op era 1.5 1.3 M ou tio nte n do 1.0 na ce ram ic bo ard 0.5 (25 0m 0.01 0.1 Tc=25C Single pulse Mounted on a ceramic board (250mm2!0.8mm) 2 3 5 7 1.0 2 3 5 7 10 2 3 5 m2 !0 .8m m) 160 0 0 20 40 60 80 100 120 140 IT09778 Collector-to-Emitter Voltage, VCE -- V Ambient Temperature, Ta -- C IT00205 No.8559-3/4 2SC6016 4.0 3.5 PC -- Tc Collector Dissipation, PC -- W 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc -- C IT01534 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2005. Specifications and information herein are subject to change without notice. PS No.8559-4/4 |
Price & Availability of 2SC6016
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